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PTFA091201GL PTFA091201HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 - 960 MHz
Description
The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2
Features
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 750 mA, = 959.8 MHz
0 55 50
*
Thermally-enhanced plastic open-cavity (EPOCTM) packages with copper flanges, Pb-free and RoHS compliant Broadband internal matching Typical EDGE performance - Average output power = 50 W - Gain = 18.5 dB - Efficiency = 44% Typical CW performance - Output power at P-1dB = 135 W - Gain = 17 dB - Efficiency = 64% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power
* *
Drain Efficiency (%)
Modulation Spectrum (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 36 38 40 42 44 46 48 50
45
Efficiency
40 35
400 KHz
30 25 20
*
600 KHz
15 10
* * *
Output Power, avg. (dBm)
RF Characteristics
EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 50 W (AVG), = 959.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency All published data at TCASE = 25C unless otherwise indicated
Symbol
EVM (RMS) ACPR ACPR Gps
Min
-- -- -- -- --
Typ
2.5 -60 -74 18.5 44
Max
-- -- -- -- --
Unit
% dBc dBc dB %
D
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 10 Rev. 02, 2008-08-27
PTFA091201GL PTFA091201HL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 110 W PEP, = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
18.0 45 --
Typ
18.5 48 -28
Max
-- -- -26
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 2.0 --
Typ
-- -- -- 0.07 2.5 --
Max
-- 1.0 10.0 -- 3.0 1.0
Unit
V A A V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 750 mA VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 120 W CW, soldered) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 625 3.57 -40 to +150 0.28
Unit
V V C W W/C C C/W
Ordering Information
Type and Version PTFA091201GL PTFA091201HL V1 V1 Package PG-63248-2 PG-64248-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Shipping Tray Tray Marking PTFA091201GL PTFA091201HL
*See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 02, 2008-08-27
PTFA091201GL PTFA091201HL
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Broadband Performance
VDD = 28 V, IDQ = 750 mA, POUT = 120 W
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = .750 mA, 1 = 959 MHz, 2 = 960 MHz
20
65
-10
Return Loss (dB), Efficiency (%)
-20 -30
19
Efficiency Gain
60
IMD (dBc)
Gain (dB)
3rd Order
-40 -50 -60
18
55 -10
5th
17
Return Loss
-15 50 -20 -25 45 960
7th
-70 36 37 38 39 40 41 42 43 44 45 46 47 48 49
16 900
910
920
930
940
950
Frequency (MHz)
Output Power, Avg (dBm)
IM3 vs. Output Power at Selected Biases
VDD = 28 V, 1 = 959 MHz, 2 = 960 MHz
series show Idq -20 -25 -30
20.0 19.5
Gain vs. Output Power
VDD = 28 V, = 960 MHz
IDQ = 1125 mA IDQ = 750 mA
525 mA
Power Gain (dB)
19.0 18.5 18.0 17.5 17.0 16.5 16.0
IMD (dBc)
-35 -40 -45 -50 -55 -60 -65 37 39 41 43 45 47 49
750 mA
IDQ = 375 mA
940 mA
38
40
42
44
46
48
50
52
54
Output Power, Avg (dBm)
Output Power (dBm)
Data Sheet
3 of 10
Rev. 02, 2008-08-27
PTFA091201GL PTFA091201HL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
EDGE Performance
VDD = 28 V, IDQ = 750 mA, = 959.8 MHz TCASE = -25C TCASE = 25C TCASE = 90C Efficiency
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 750 mA, = 960 MHz
9
55 50
20 19 18
70 60
RMS EVM (Average %) .
8 7 6 5 4 3 2 1 0 36
Drain Efficiency (%)
40 35 30 25 20
Gain
50 40 30
17 16 15 14 40 42 44 46 48 50 52
EVM
Efficiency
15 10 50
20 10
38
40
42
44
46
48
Output Power, Avg. (dBm)
Output Power (dBm)
Output Power (P-1dB) vs. Supply Voltage
IDQ = 750 mA, = 960 MHz
IS-95 CDMA Performance
VDD = 28 V, IDQ = 750 mA, = 960 MHz
52.5 52.0
40 35
-10 -20 -30 -40
51.5 51.0 50.5 50.0 49.5 24 26 28 30
30 25 20 15 10 5 32 34 36 38 40 42 44 46
Adj 750 kHz
-50 -60
Alt1 1.98 MHz
-70 -80
Supply Voltage (V)
Output Power (dBm), Avg.
Data Sheet
4 of 10
Rev. 02, 2008-08-27
Adj. Ch. Power Ratio (dBc)
Efficiency
Output Power (dBm)
Drain Efficiency (%)
Drain Efficiency (%)
45
Gain (dB)
PTFA091201GL PTFA091201HL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
1.03 0.4 A 1.2 A 3.0 A 1.01 1.00 0.99 0.98 0.97 0.96 -20 6.0 A 9.0 A 12.0 A 16.0 A
Normalized Bias Voltage (V)
1.02
0
20
40
60
80
100
Case Temperature (C)
Broadband Circuit Impedance
Frequency
D
Z Source
R 5.86 5.84 5.85 5.82 5.79 jX -0.32 -0.27 -0.02 0.10 0.27
Z Load
R 2.20 2.17 2.16 2.15 2.13 jX 0.69 0.69 0.85 0.92 1.02
Z Source
Z Load
MHz 920 930 940 950
G S
R
960
- WAVE LE NGTH S T OW A
Z0 = 50
960 MHz
0.0 0.1 TOW ARD LOAD GT HS EL E N
0.2
0.3
0.4
920 MHz
920 MHz
0.1
Data Sheet
W AV
5 of 10
0.5
0 .1
Z Load Z Source
960 MHz
Rev. 02, 2008-08-27
PTFA091201GL PTFA091201HL
Confidential, Limited Internal Distribution
Reference Circuit
C1 0.001F R2 1.3K V R1 1.2K V
QQ1 LM7805 VDD
Q1 BCP56 C2 0.001F R3 2KV C3 0.001F R4 2KV R5 5.1K V C4 10F 35V
R6 10 V C5 0.1F R7 5.1K V C6 33pF C7 0.1F C8 0.01F C9 33pF C14 33pF C15 1F
L1
VDD
C16 10F 50V C17 0.1F C18 10F 50V
l5 l6
C10 33pF RF_IN R8 10 V DUT C24 1.0pF
C27 33pF
l1
l2
C11 1.2pF
l3
C12 7.5pF
l4
C13 0.7pF
l8
l9
C25 1.0pF
l10
C26 2.4pF L2
l11
l12
l13
C28 0.5pF
RF_OUT
l7
C19 33pF
C20 1F
C21 10F 50V
C22 0.1F
C23 10F 50V
Reference circuit schematic for = 960 MHz Circuit Assembly Information DUT PTFA091201GL or PTFA091201HL PCB 0.76 mm [.030"] thick, r = 4.5
Rogers TMM4
LDMOS Transistor 2 oz. copper
Microstrip
Electrical Characteristics at 960 MHz1
0.072 0.115 0.029 0.062 0.149 0.122 0.027 0.103 0.072 0.155 0.013 0.015 , 50.0 , 50.0 , 50.0 , 7.5 , 70.0 , 55.0 , 7.9 , 7.9 , 7.9 , 38.0 , 50.0 , 50.0
Dimensions: L x W ( mm) Dimensions: L x W (in.)
12.27 x 1.40 19.53 x 1.40 5.08 x 1.40 9.53 x 16.15 26.31 x 0.71 20.96 x 1.17 4.06 x 15.24 15.75 x 15.24 11.02 x 15.24 25.78 x 2.13 2.24 x 1.40 2.59 x 1.40 0.483 0.769 0.200 0.375 1.036 0.825 0.160 0.620 0.434 1.015 0.088 0.102 x x x x x x x x x x x x 0.055 0.055 0.055 0.636 0.028 0.046 0.600 0.600 0.600 0.084 0.055 0.055
l1 l2 l3 l4 l5 l6, l7 l8 l9 l10 l11 l12 l13
1Electrical characteristics are rounded.
Data Sheet
6 of 10
Rev. 02, 2008-08-27
a09201ef sh 1 _c
PTFA091201GL PTFA091201HL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
R5 R4 C4 C5 C9 C8 R3 C6 C3 R1 R2 R8
C1 LM
QQ1 C2
VDD
C14 C15
C18
C16
L1
VDD
R6 R7 C7
Q1
C17 C24 C28 RF_OUT
RF_IN
C10 C11
C12 C13
C25
C26 C21
C27
C22 L2
C19
C20
VDD
C23
A091201in_01
A091201out_01
a091201ef assy _
Reference circuit assembly diagram (not to scale)*
Component
C1, C2, C3 C4 C5, C7 C17, C22 C6, C9, C10, C14, C19, C27 C8 C11 C12 C13 C15, C20 C16, C18, C21, C23 C24, C25 C26 C28 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6, R8
Description
Capacitor, 0.001 F Tantalum capacitor, 10 F, 35 V Capacitor, 0.1 F Ceramic capacitor, 33 pF Capacitor, 0.01 F Ceramic capacitor, 1.2 pF Ceramic capacitor, 7.5 pF Ceramic capacitor, 0.7 pF Capacitor, 1.0 F Tantalum capacitor, 10 F, 50 V Ceramic capacitor, 1.0 pF Ceramic capacitor, 2.4 pF Ceramic capacitor, 0.5 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip Resistor 1.2 k-ohms Chip Resistor 1.3 k-ohms Chip Resistor 2 k-ohms Potentiometer 2 k-ohms Chip Resistor 5.1 k-ohms Chip Resistor 10 ohms
Suggested Manufacturer
Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC ATC Garrett Electronics ATC ATC ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key
P/N or Comment
PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 100B 330 200B 103 100B 1R2 100B 7R5 100B 0R7 920C105 TPSE106K050R0400 100B 1R0 100B 2R4 100B 0R5 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND
*Gerber files for this circuit available on request Data Sheet 7 of 10 Rev. 02, 2008-08-27
PTFA091201GL PTFA091201HL
Confidential, Limited Internal Distribution
Package Outline Specifications Package PG-63248-2
4.830.51 [.190.020] 45 X 1.78 [45 X .070] 45 X 2.72 [45 X .107]
C L
6.
2X R1.63 [R.064]
C L
9.78 0.08 [.385 .003]
3X R0.51+1.14 -0.25 [R.020+.045 ] -.010
20.27 [.798]
C L
3.63+0.25 -0.13 [.143 +.010 ] -.005
0.064 (.0025) -A-
PG-63248-2(G)_po_8-28-08
34.04 0.08 [1.340 .003]
Diagram Notes--unless otherwise specified: 1. 3. 4. 5. 6. 7. Interpret dimensions and tolerances per ASME Y14.5M-1994. Pins: D = drain, S = source, G = gate. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. Gold plating thickness: < 0.254 micron [< 10 microinch] Tabs may protrude 0.13 [.005] max from body. All tolerances 0.25 [.01] / 0.127 [.005] unless specified otherwise. 2. Primary dimensions are mm. Alternate dimensions are inches.
Data Sheet
8 of 10
Rev. 02, 2008-08-27
PTFA091201GL PTFA091201HL
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.) Package PG-64248-2
9.78 0.08 [.385 .003]
pg-64248-2(h)_po_8-28-08
20.57 0.08 [.810 .003]
Diagram Notes--unless otherwise specified: 1. 3. 4. 5. 6. 7. Interpret dimensions and tolerances per ASME Y14.5M-1994. Pins: D = drain, S = source, G = gate. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. Gold plating thickness: < 0.254 micron [< 10 microinch] Tabs may protrude 0.13 [.005] max from body. All tolerances 0.25 [.01] / 0.127 [.005] unless specified otherwise. 2. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower
Data Sheet
9 of 10
Rev. 02, 2008-08-27
PTFA091201GL/HL-V1 Confidential, Limited Internal Distribution Revision History: 2008-08-27 2008-06-16, Preliminary Data Sheet Previous Version: Page all 8, 9 Subjects (major changes since last revision) Remove Preliminary designation Revise package diagrams and notes
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA toll-free or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2008-08-27 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 02, 2008-08-27

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